InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp Hydrothermal Reactors Orientation: (111) A +/-1 degree
$399.62
Description
Orientation: (111) A +/-1 degree
78) x 10^18/cm^3
After perfectly crimping
Growing Method: VGF
InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp Hydrothermal Reactors Orientation: (111) A +/-1 degreeInP single crystal wafer Orientation: (111)B Size: 2" diameter x 0. 35mm Doping: undoped Conducting type: N Type, Semi Conducting Resistivity: (2 5)E 1 ohm. cm Carrier Concentration:(3. 0 6. 0)E15 c. c. Mobility: 3900 4570cm^2 v. s Polish: one side polished Ra(Average Roughness) : < 0. 4 nm EPD: N A EPI ready surface and packing
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