InAs (100), undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Density: 5
$148.35
Description
Density: 5
Conductor type: S-C-N
Grinding balls
Surface Polishing: Two sides epi polished
InAs (100), undoped 10x10x0.5mm, 1sp Boron-Nitride on Silicon Density: 5Growth method LEC Orientation (100) + 0. 5 Orientation Flat N A Doping Undoped Conductivity type N type Carrier Concentration <3E16 cm3 Mobility >20000 cm2 V. S EPD <5E4 cm 2 Standard thickness 500+ 20 mm Standard size 10mm x 10mm Polish one side
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